Silicon Nitride Single-Layer X-Ray Mask
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概要
- 論文の詳細を見る
In the low pressure chemical vapor deposition process, preparation of silicon nitride with low film stress and low refractive index is investigated as a function of deposition temperature and reactant gas ratio SiH_2Cl_2/NH_3. The silicon nitride film with a stress of 15 kg/mm^2 and refractive index of 2.3 is formed at the deposition temperature of 850℃ and the SiH_2Cl_2/NH_3 ratio of 4/1. Using the film as an X-ray mask, a silicon nitride single-layer X-ray mask is realized, which has a 30x30 mm window and has high transparency to visible light.
- 社団法人応用物理学会の論文
- 1981-09-05
著者
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Ohkubo Takashi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Ohkubo Takashi
Musashino Electrical Communication Laboratory N.t.t.
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Yoshihara Hideo
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephon Public Corporation
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Saitoh Yasunao
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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SEKIMOTO Misao
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Sekimoto Misao
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Sekimoto Misao
Musashino Electric Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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SAITOH Yasunao
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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