Deep-UV Photolithography
スポンサーリンク
概要
- 論文の詳細を見る
Methacrylates PMMA, P(MMA-MA)and FBM can be satisfactorily used as photoresist. FBM has the sensitivity 7 times higher than the PMMA standard developing system. PGMA and P(GMA-EA) have the positive working behaviors. The chrome-on-quartz substrate mask is suitable as a photomask. A Xe-Hg short arc lamp and a Hg long arc lamp are excellent deep-uv sources. Using a collimated exposure system with the 110 mm beam diameter composed of a 600 W Xe-Hg arc lamp, an ellipsoidal reflector and an optical integrator, the required expousre time for PMMA with 1 μm thickness is about 1.5 min. High quality submicron patterns having an aspect ratio of 5can be replicated on PMMA and P(MMA-MA) by contact printing. A pattern consisting of 1 μm lines is printed on FBM 0.8 μm thick. In the proximity printing, high quality 2 μm patterns can be replicated on PMMA 0.7 μm thick with 20 μm spacings when the beam collimating angle is 2°.
- 社団法人応用物理学会の論文
- 1978-03-05
著者
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Ohkubo Takashi
Musashino Electrical Communication Laboratory N.t.t.
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Ohkubo Tadakatsu
Faculty Of Engineering Nagaoka University Of Technology
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Mimura Yoshiaki
Musashino Electrical Communication Laboratory N.t.t.
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TAKEUCHI Tatsuo
Musashino Electrical Communication Laboratory, N.T.T.
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SEKIKAWA Kyozo
Musashino Electrical Communication Laboratory, N.T.T.
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Sekikawa Kyozo
Musashino Electrical Communication Laboratory N.t.t.
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Takeuchi Tatsuo
Musashino Electrical Communication Laboratory N.t.t.
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