Observation Technique for Process-Induced Defects Using Anodic Oxidation (Special Issue on Scientific ULSI Manufacturing Technology)
スポンサーリンク
概要
- 論文の詳細を見る
A new observation technique for process-induced micro-defects in ULSI using a combination of anodic oxidation and chemical removal of the oxide has been developed. Enhanced oxidation has occurred at the defect region due to the stress field and then craterlike delineation has been formed after oxide removal. AFM and SEM observation of the micro-defects induced by ion implantation and applications using this technique to the failure analysis of MOS device fabrication are presented.
- 社団法人電子情報通信学会の論文
- 1996-03-25
著者
-
INOUE Morio
Kyoto Research Laboratory, Matsushita Electronics Corporation
-
Inoue Morio
Kyoto Research Laboratory Matsushita Electronics Corp.
-
Fujii S
Ion Engineering Research Institute Corp.
-
FUJII Shinji
Ion Engineering Research Institute Corp.
関連論文
- New Drive Line Shape for Reflective Magnetooptic Spatial Light Modulator
- Magnetooptic Spatial Light Modulator for Volumetric Digital Recording System
- Magneto-optic spatial light modulator based on magneto-photonic crystal
- One-Dimensional Magnetophotonic Crystal Spatial Light Modulator
- Optical Properties of Domain Pattern Induced in Nematic Liquid-Crystal Cell by Elastic Wave Propagation : Optical Properties of Condensed Matter
- Propagation Characteristics of Lamb Wave in Nematic Liquid-Crystal Cell
- Influence of Liquid-Crystal Directors in an Electric Field on Elastic Wave Propagating in Liquid-Crystal Cell
- Viscosity Measurement of Nematic Liquid Crystal Using Shear Horizontal Wave Propagation in Liquid Crystal Cell
- Viscosity Measurement of Ferroelectric Liquid Crystal Using Shear Horizontal Wave Propagation in a Trilayer Structure
- Periodic Property of Domain in Nematic Liquid Crystal Induced by Elastic Wave
- Plasma-Wall Interactions in Dual Frequency Narrow-Gap Reactive Ion Etching System
- Beam-Profile Control Using an Octupole Magnet
- Etch-Back Planarization Technique for Multilevel Metallization
- Improved Metal Gate Process by Simultaneous Gate-Oxide Nitridation during W/WN_x Gate Formation
- Improved Metal Gate Process by Simultaneous Gate-Oxide Nitridation during W/WNx Gate Formation
- Model Test of Biperiodic L-support Disk-and-Washer Linac Structure
- Interface-Treated Josephson Junctions in Trilayer Structures
- Novel Nanofabrication Process for InAs/AlGaSb Heterostructures Utilizing Atomic Force Microscope Oxidation
- Coulomb Blockade Observed in InAs/AlGaSb Nanostructures Produced by an Atomic Force Microscope Oxidation Process
- Charge-storage Effect of Vertically Stacked InAs Nanodots Embedded in AI_Ga_As Matrix
- CF and CF_2 Radical Densities in 13.56-MHz CHF_3/Ar Inductively Coupled Plasma(Nuclear Science, Plasmas, and Electric Discharges)
- Planarization of the Yba_2Cu_3O_ Base Electrodes in Trilayer Josephson Junctions : Superconductors
- Characterization of Ion Implantation Dose by Raman Scattering and Photothermal Wave Techniques
- Secondary Defects of As^+ Implanted Silicon Measured by Thermal Wave Technique
- Evaluation of Device Charging in Ion Implantation
- Correlation Dimensions of Human-Generated Random Numbers
- Detection and Printability of Shifter Defects in Phase-Shifting Masks II. : Defocus Characteristics
- Detection and Printability of Shifter Defects in Phase-Shifting Masks : Photolithography
- Pattern Transfer Characteristics of Transparent Phase Shifting Mask : Photolithography
- Detection and Printability of Shifter Defects in Phase-Shifting Masks
- Pattern Transfer Characteristics of Transparent Phase Shifting Mask
- Charge Buildup in Magnetized Process Plasma
- Experimental and Theoretical Study of the Charge Build-Up in an ECR Etcher : Etching and Deposition Technology
- Thermodynamics of Development Process of Positive Resists in Binary Mixed Developer : Resist Material and Process
- A DUV-Defined-Negative Resist/EB-Defined-positive Resist Two-Layer Resist System for the Fabrication of T-Shaped Gate : Lithography Technology
- A DUV-Defined-Negative Resist/EB-Defined-Positive Resist Two-Layer Resist System for the Fabrication of T-Shaped Gate
- Thermodynamics of Development Process of Positive Resists in Binary Mixed Developer
- Experimental and Theoretical Study of the Charge Build-Up in an ECR Etcher
- Observation Technique for Process-Induced Defects Using Anodic Oxidation (Special Issue on Scientific ULSI Manufacturing Technology)
- Epitaxial Lateral Overgrowth (ELO) of Silicon on the Whole Surface
- A Novel Atomic Force Microscopy Observation Technique for Secondary Defects of Ion Implantation, using Anodic Oxidation