A Novel Atomic Force Microscopy Observation Technique for Secondary Defects of Ion Implantation, using Anodic Oxidation
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概要
- 論文の詳細を見る
A novel observation technique for secondary defects of ion implantation has been developed. Stripping of the surface by means of a combination of anodic oxidation and removal of the oxide has been found to expose the buried secondary defects induced by ion implantation. The defects observed by means of atomic force microscopy (AFM) show craterlike forms created by enhanced oxidation around the secondary defects. Detection of the defects with this technique is complementary to conventional transmission electron microscopy (TEM) observation. The technique is a promising method for clarifying the depth distribution of various defects. The technique has also been found to be advantageous for planar TEM observation.
- 1993-02-01
著者
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Inoue Morio
Kyoto Research Laboratory Matsushita Electronics Corp.
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Fujii Shinji
Kyoto Research Laboratory Matsushita Electronics Corp.
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Harada Yoshikazu
Kyoto Research Laboratory Matsushita Electronics Corp.
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FUJII Shinji
Kyoto Research Laboratory, Matsushita Electronics Corp.
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FUSE Genshu
Kyoto Research Laboratory, Matsushita Electronics Corp.
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