Epitaxial Lateral Overgrowth (ELO) of Silicon on the Whole Surface
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概要
- 論文の詳細を見る
In order to obtain a SOI layer over the whole surface, techniques using two ELO procsses are presented. In the first ELO process, the silicon epitaxial layer grows vertically through openings between the <100> SiO_2 stripes and laterally across SiO_2 stripes at the bottom of the trench etched in the silicon epitaxial layer, between the SiO_2 stripes.
- 社団法人応用物理学会の論文
- 1988-08-20
著者
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INOUE Morio
Kyoto Research Laboratory, Matsushita Electronics Corporation
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Inoue Morio
Kyoto Research Laboratory Matsushita Electronics Corp.
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NAMURA Takashi
Kyoto Research Lab., Matsushita Electronics Corp.
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Oishi Hiroshi
Kyoto Research Laboratory Matsushita Electronics Corporation
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MIYAI Yukio
Kyoto Research Laboratory, Matsushita Electronics Corporation
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Miyai Yukio
Kyoto Research Laboratory Matsushita Electronics Corporation
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