Lattice Dynamics of Black Phosphorus.I.Valence Force Field Model

スポンサーリンク

概要

• 論文の詳細を見る

• Calculation of the lattice dynamical properties of black phosphorus, which is a nar-row-gap covalent semiconductor with a layered structure, based on the valence forcefield model is presented. The results obtained are in good agreement with the ex-periments, except for infrared active optical modes. The results are discussed in con-nection with the crystal structure and the chemical-bonding nature of blackphosphorus.

• 社団法人日本物理学会の論文
• 1986-04-15

著者

• MORITA Akira

  Department of Electronic Engineering,Iwate University

• KATAYAMA-YOSHIDA Hiroshi

  Department of Physics,Tohoku University

• Katayama-yoshida Hiroshi

  Department Of Physics Tohoku University

• Katayama-yoshida Hiroshi

  Department Of Condensed Matter Physics Osaka University:department Of Computational Nanomaterials De

• Katayama‐yoshida H

  Department Of Physics Tohoku University

• KANETA Chioko

  Department of Physics,Tohoku University

• Kaneta C

  Department Of Physics Tohoku University:fujitsu Lab.ltd.

• Kaneta Chioko

  Department Of Physics Tohoku University:fujitsu Lab.ltd.

• Katayama-yoshida Hiroshi

  Department Of Computational Science Asahi Chemical Industry Co. Ltd.:presto Japan Science And Techno

• Morita Akira

  Department Of Basic Science Ishinomaki Senshu University

• Katayama-Yoshida Hirosi

  Department of Physics,Tohoku University

関連論文

• 29pTE-7 第一原理熱力学計算によるインテリジェント触媒の表面構造の解明(29pTE 微粒子・クラスタ,領域9(表面・界面,結晶成長))
• 27aPS-10 Hard X-ray photoelectron spectroscopy of doped Silicon
• 27aYG-2 電子励起原子移動によるダイマーフラーレン合成の第一原理的研究(27aYG フラーレン,領域7(分子性固体・有機導体))
• 22aPS-134 LDA+SIC法による磁性半導体の電子構造の計算(領域4ポスターセッション,領域4,半導体,メゾスコピック系・局在)
• 26aTF-3 αホウ素の不純物添加による金属化(ゼオライト・クラスター,領域7,分子性固体・有機導体)
• 23pTH-2 不純物添加した固体ホウ素の物性(クラスレート・新物質,領域7,分子性固体・有機導体)
• ^Se NMR Evidence for the Jaccarino-Peter Mechanism in the Field Induced Superconductor, λ-(BETS)_2FeCl_4(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
• 22aXB-2 第一原理熱力学計算によるインテリジェント触媒の自己再生機構の解明(22aXB 微粒子・クラスタ,領域9(表面・界面,結晶成長))
• Dilute Magnetic Semiconductors Based on Half-Heusler Alloys(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
• 22aTG-2 希薄磁性半導体における磁気励起の研究(磁性半導体,領域4,半導体,メゾスコピック系・局在)
• 24pYF-7 Si結晶中の単原子空孔の弾性定数への影響(格子欠陥・ナノ構造(半導体),領域10,誘電体,格子欠陥,X線・粒子線,フォノン物性)
• 24pYF-8 シリコン中のCu複合体のフォトルミネッセンス : 解釈(格子欠陥・ナノ構造(半導体),領域10,誘電体,格子欠陥,X線・粒子線,フォノン物性)
• 22aTG-3 TiO_2ベース希薄磁性半導体の第一原理計算(磁性半導体,領域4,半導体,メゾスコピック系・局在)
• Revised Results for the Band Properties of Black Phosphorus
• The Energy Band Structure of Black Phosphorus and Angle-Resolved Ultraviolet Photoelectron Spectra
• 22pTD-11 結晶シリコンにおける単原子空孔の弾性定数への影響(格子欠陥・ナノ構造(金属・半導体),領域10,誘電体,格子欠陥,X線・粒子線,フォノン物性)
• First-Principles Study on the Ferromagnetism and Curie Temperature of Mn-Doped AlX and InX (X=N, P, As, and Sb)(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
• Anomalous Nuclear Relaxation and Knight Shift Behaviors of ^Tl in High-T_c Tl_2Ba_2Ca_1Cu_2O_
• Theoretical Prediction of Curie Temperature in (Zn, Cr)S, (Zn, Cr)Se and (Zn, Cr)Te by First Principles Calculations
• Charge and Spin States of Transition-Metal Atoms in a Hemoprotein Based on the Extended Haldane-Anderson Model
• Exchange Interaction and T_c in Alkaline-Earth-Metal-Oxide-Based DMS without Magnetic Impurities : First Principle Pseudo-SIC and Monte Carlo Calculation(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
• T_c-Enhanced Codoping Method for GaAs-Based Dilute Magnetic Semiconductors
• 22aTL-2 日本企業の成長性(経済物理I,領域11,統計力学,物性基礎論,応用数学,力学,流体物理)
• 26pYG-4 同時ドーピング法による半導体をベースとする水素貯蔵材料のデザイン(ダイナミクス,領域9,表面・界面,結晶成長)
• 28pTE-7 第一原理計算によるインテリジェント触媒の自己再生機能の解明(28pTE 結晶成長,領域9(表面・界面,結晶成長))
• 30aVE-2 磁性半導体における同時ドーピングによる高濃度磁性元素添加とアニーリング効果(30aVE 磁性半導体,領域4(半導体,メゾスコピック系・局在))
• 30aVE-1 第一原理計算による4族半導体ベース磁性半導体のデザイン(30aVE 磁性半導体,領域4(半導体,メゾスコピック系・局在))
• 22aQE-7 負の有効電子相関系に関する一般則と物質設計の理論(22aQE 銅酸化物など(理論),領域8(強相関系:高温超伝導,強相関f電子系など))
• 24aWJ-3 3dと4d遷移金属の同時添加による希薄磁性半導体の物質設計(磁性半導体,領域4,半導体,メゾスコピック系・局在)
• The Electronic Structure and Atomic Configuration of Hydrogen in Silicon
• Materials Design of 4d-Transition-Metal-Doped Transparent and Half-Metallic Ferromagnets with K_2S-Based Diluted Magnetic Semiconductors
• Lattice Dynamics of Black Phosphorus.I.Valence Force Field Model
• Isotope Effect in Superconducting YBa_2Cu_3O_ System
• Lattice Dynamics of Black Phosphorus.II.Adiabatic Bond Charge Model
• Material Design for the Fabrication of p-type SrTiO_3 : Electrical Properties of Condensed Matter
• Photoconductive Decay Measurements on Semiconducting Black Phosphorus Crystals
• Photoconduction of Black Phosphorus in the Infrared Region
• NMR and NQR Studies of ^O and ^Cu in CuO_2 Plane of High-T_c YBa_2 Cu_3O_ with T_c=61K
• Growth of YBa_2Cu_3O_ Single Crystals
• Two-Dimensional Anderson Localization in Black Phosphorus Crystals Prepaerd by Bismuth-Flux Method
• Strucrural Stability and Band Structure of the Mentallic Phase of Phosphorus
• Electrical Properties of Black Phosphorus Single Crystals Prepared by the Bismuth-Flux Method
• MC-07 DISK ERASER FOR HDD SERVO PATTERN BY HIGHLY EFFICIENT PERMANENT MAGNET MATRIX
• Electron-Energy-Loss Spectroscopy of Oxide Superconductor Bi_2Sr_2CaCu_2O_8
• Bound States in Copper-Based Cu-Ge and Cu-Se Alloys Studied by X-Ray Photoelectron Spectroscopy
• Role of Cl or I Codoping in Li-Doping Enhancement in ZnSe
• Interstitial Donor Codoping Method in (Ga,Mn)As to Increase Solubility of Mn and Curie Temperature
• Reproducibility in Single-Crystal Growth of 2-1-4 Type Cuprates and Nickelates by Floating Zone Method : I-C Single Crystal Growth : I. Oxide Superconductors, Experiments I : Material Syntheses and Crystal Structures
• Systematic Variation of Hyperfine Field and Relaxation Time of Impurity Nuclei in Ferromagnetic Nickel. II. Case of Light Nuclei
• Systematic Variation of Hyperfine Field and Relaxation Time of Impurity Nuclei in Ferromagnetic Nickel. I. : Case of Substitutional Heavy Nuclei
• EFFECTS OF AN ANTIULCER AGENT, N-ACETYL-L-GLUTAMINE ALUMINUM COMPLEX (KW-110) ON THE DUODENAL AND GASTRIC ULCER MODELS IN THE RAT
• A Pressure-Induced Isostructural Transition in Black Phosphorus
• On the Shape of Electron-Hole Droplets in Highly Excited Anisotropic Semiconductors : Application to Uniaxially Stressed Ge and Si
• Electronic Structure of Black Phosphorus in Self-Consistent Pseudopotential Approach
• High-Temperature Series Analysis for the Classical n-Vector Model with a Free Surface : Condensed Matter and Statistical Physics
• Calculation of the Migration Energy of the Interstitial in Si and Ge
• Physics and Control of Conduction Type in CuInS_2 with Defect Chalcopyrite Structure
• De Haas-van Alphen Measurement of YBa_2Cu_3O_7 : II-D Transport Properties : II Oxide Superconductors; Experiments II : Electronic States
• Materials Design for the Fabrication of Low-Resistivity p-Type GaN Usimg a Codoping Method
• Electron-Phonon Interaction and Anisotropic Mobility in Black Phosphorus
• Bond Charges and Crystal Pseudopotential in Black Phosphorus
• Spin-Orbit Coupling in Ionic Crystals with Zincblende and Wurtzite Structures
• Material Design of GaN-Based Ferromagnetic Diluted Magnetic Semiconductors
• Prediction of Intrinsic Defects in Hydrogenated Amorphous Silicon by ab initio Molecular Dynamics
• Theoretical Prediction of Magnetic Properties of Ba(Ti_M_χ)O_3(M=Sc,V,Cr,Mn,Fe,Co,Ni,Cu) : Semiconductors
• Electronic Structures and Effects of S Substitutions in CuIn(S_X_)_2 (X = O, N, P, C, Si or B)
• Comparative Study on Electronic Structure of Doped Fullerenes and High-Tc Oxide Superconductors
• Solution Using a Codoping Method to Unipolarity for the Fabrication of p-Type ZnO
• Stabilization of Ferromagnetic States by Electron Doping in Fe-, Co- or Ni-Doped ZnO : Magnetism
• Charge Distribution among Graphite Layers in High-Stage Alkali-Graphite Intercalation Compounds
• Theoretical Investigation of the X-Ray Level Widths of Light Metals
• Theory of Impurity Levels
• Collective Excited States and Dielectric Constant in Insulators
• Perturbation Theory of Covalent Crystals. : II. Lattice Vibration Spectra in Si and Ge
• Edge Structure of the Fundamental Optical Absorption of Alkali Halide Crystals
• The Crystal Binding Energies of the IV-VI Semiconductors
• Electronic Structure of Black Phosphorus in Tight Binding Approach
• Perturbation Theory of Covalent Crystals. : III. Calculation of Formation and Migration Energies of a Vacancy in Si and Ge
• Shallow Donor Potential in Silicon
• A Pseudopotential Approach to the Structure of As. : II. Use of an Untruncated Potential
• The Transverse Effective Charges of the IV-VI Semiconductors
• A Pseudopotential Approach to the Structure of As
• Theory of Impurity Levels. : II. Polar Crystals
• Chemical Splitting of Ground State of Lithium Donor in Silicon
• A highly selective transannular route to trans-trans-1,2,3,3a,4,5,9,10,10a,10b-decahydropyrenes from (2.2)metacyclophanes.
• Preparation of Black Phosphorus Single Crystals by a Completely Closed Bismuth-Flux Method and Their Crystal Morphology

もっと見る 閉じる

スポンサーリンク