Calculation of the Migration Energy of the Interstitial in Si and Ge
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概要
- 論文の詳細を見る
The interstitial in Si and Ge is investigated theoretically by using the extended perturbation theory in pseudopotential formalism developed by two of the authors (A.M. and T.S.). It is shown that the interstitial is most stable at the hexagonal site and its diffusion path is hexagonal⟶tetrahedral⟶hexagonal. The calculated migration energy of the interstitial is 0.18eV for Si and 0.09eV for Ge.
- 社団法人日本物理学会の論文
- 1973-07-05
著者
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MORITA Akira
Department of Electronic Engineering,Iwate University
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Saeki Mizuhiko
Department Of Physics Faculty Of Science Tohoku University:(present Address) Kitaitami Works Mitsubi
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SOMA Toshinobu
Department of Physics, Faculty of Science, Tohoku University
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Soma Toshinobu
Department Of Applied Physics And Mathematics Mining College Akita University
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Soma Toshinobu
Department Of Physics Faculty Of Science Tohoku University:(present Address) Mining Colledge Akita U
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Morita Akira
Department Of Basic Science Ishinomaki Senshu University
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Morita Akira
Department Of Physics Faculty Of Science Tohoku University
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MORITA Akira
Department of Physics, Faculty of Science, Tohoku University
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