Thermal Expansion Coefficient of Si and Ge

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概要

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• On the basis of a phenomenological theory with the experintental pressure de-pendence of phonon frequencies and elastic constants, the temperature-dependenceof the GrQneisen constant is investigated for Si and Ge. The derived therntalexpansion coefficient beconaes negative at low temperatures for Si and is qualita-lively agreement with the observed data

• 社団法人日本物理学会の論文
• 1977-05-15

著者

• Soma Toshinobu

  Department Of Applied Physics And Mathematics Mining College Akita University

• Soma Toshinobu

  Department of Applied Physics and Mathematics,Mining College,Akita University

関連論文

• Calculation of the Migration Energy of the Interstitial in Si and Ge
• Perturbation Theory of Covalent Crystals. I. : Calculation of Cohesive Energy and Compressibility
• Thermal Expansion Coefficient of Si and Ge
• Static and Dynamical Elastic Constants of Simple Metals
• Note on the Valence Force Model for the Lattice Vibration
• Covalent Bond Correction to the Crystal Energy of Covalent Semiconductors
• Perturbation Theory of Covalent Crystals. : II. Lattice Vibration Spectra in Si and Ge
• Perturbation Theory of Covalent Crystals. : III. Calculation of Formation and Migration Energies of a Vacancy in Si and Ge

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