Covalent Bond Correction to the Crystal Energy of Covalent Semiconductors

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概要

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• Higher than third order contributions in terms of pseudopotentials to the crystal energy of covalent semiconductors such as Si, Ge, etc. -convalent bond correction energies- are examined in detail. In these crystals the perturbation formula, where large pseudopotential Fourier component V(111) is regarded as a first order small quantity and other V(G)'s as second order small quantities, is efficient.

• 社団法人日本物理学会の論文
• 1974-04-15

著者

• Soma Toshinobu

  Department Of Applied Physics And Mathematics Mining College Akita University

関連論文

• Calculation of the Migration Energy of the Interstitial in Si and Ge
• Perturbation Theory of Covalent Crystals. I. : Calculation of Cohesive Energy and Compressibility
• Thermal Expansion Coefficient of Si and Ge
• Static and Dynamical Elastic Constants of Simple Metals
• Note on the Valence Force Model for the Lattice Vibration
• Covalent Bond Correction to the Crystal Energy of Covalent Semiconductors
• Perturbation Theory of Covalent Crystals. : II. Lattice Vibration Spectra in Si and Ge
• Perturbation Theory of Covalent Crystals. : III. Calculation of Formation and Migration Energies of a Vacancy in Si and Ge

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