On the Shape of Electron-Hole Droplets in Highly Excited Anisotropic Semiconductors : Application to Uniaxially Stressed Ge and Si
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概要
- 論文の詳細を見る
- 社団法人日本物理学会の論文
- 1976-07-15
著者
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MORITA Akira
Department of Electronic Engineering,Iwate University
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Morita A
Department Of Electrical Engineering Faculty Of Engineering University Of Tokyo
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Shindo Koichi
Department Of Physics Faculty Of Science Tohoku University
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MORIMOTO Masamichi
Department of Physics, Tohoku University
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Morimoto Masamichi
Department Of Physics Tohoku University
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Morita Akira
Department Of Basic Science Ishinomaki Senshu University
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- Two-Dimensional Anderson Localization in Black Phosphorus Crystals Prepaerd by Bismuth-Flux Method
- Strucrural Stability and Band Structure of the Mentallic Phase of Phosphorus
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- Calculation of the Migration Energy of the Interstitial in Si and Ge
- Electron-Hole Pair Condensation and Liquefaction in Strong Magnetic Fields
- The Effective Mass Equation for the Multi-Valley Semiconductors
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