A Pseudopotential Approach to the Crystal Energy of Si
スポンサーリンク
概要
- 論文の詳細を見る
The pseudopotential of Si crystal is determined self-consistently from the Topp-Hopfield type model potential of Si atom by using the Slater approximation. Thecrystal energy and compressibility are calculated on the basis of the resultant bandstructure and the charge density. A good agreement between the calculated values andthe experimental ones is obtained with no adjustment such as the zero pressurecondition nor fitting to the band structure near the fundamental band gap as done inthe usual empirical pseudopotential methods.
- 社団法人日本物理学会の論文
- 1977-12-15
著者
-
Shindo Koichi
Department Of Physics Faculty Of Science Tohoku University
-
OHKOSHI Ichiro
Department of Physics,Faculty of Science,Tohoku University
-
Ohkoshi Ichiro
Department Of Physics Faculty Of Science Tohoku University
関連論文
- On the Shape of Electron-Hole Droplets in Highly Excited Anisotropic Semiconductors : Application to Uniaxially Stressed Ge and Si
- Self-Consistent Pseudopotential Calculation of the Band Structure and the Crystal Energy of As
- Space Dependence of Dielectric Function in Si Crystal
- Self-Consistent Pseudopotential of As
- The Effective Mass Equation for the Multi-Valley Semiconductors
- Exciton-L0 Phonon Scattering in Cu_2O
- Effective Electron-Hole Interaction in Shallow Excitons
- Binding Energies of Yellow Exciton Series in Cu_2O
- Self-Consistent Pseudopotential of Si
- A Pseudopotential Approach to the Crystal Energy of Si
- Spin-Orbit Coupling in Ionic Crystals with Zincblende and Wurtzite Structures
- Local Field Correction and Acoustic Sum Rule for Si and Ge
- A Pseudopotential Approach to the Structure of As. : II. Use of an Untruncated Potential
- Pseudopotential Approach to Anisotropies of Compton-Profiles of Si and Ge