Local Field Correction and Acoustic Sum Rule for Si and Ge

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概要

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• The microscopic inverse dielectric matrix in the limit of (l long wavelength iscalculated in the random phase approximation for Si a.nd Ge by rushing the realistic bandmodels. It is shown that, if a proper form of the pseudopotential is employed, theacoustuc sum rule can be substantially satisfied withottt any adjustable parameter, andthe local field correction to the static dielectric constant can not be neglected.

• 社団法人日本物理学会の論文
• 1977-09-15

著者

• Shindo Koichi

  Department Of Physics Faculty Of Science Tohoku University

• Nara Hisashi

  Physics Department College Of Arts And Sceinces Tohoku University

• Hara Hisashi

  Physics Department College Of Arts And Science Tohoku University

• Shindo Koichi

  Department of Physics,Tohoku University

関連論文

• Theory of Extended Pseudopotentials
• On the Shape of Electron-Hole Droplets in Highly Excited Anisotropic Semiconductors : Application to Uniaxially Stressed Ge and Si
• Self-Consistent Pseudopotential Calculation of the Band Structure and the Crystal Energy of As
• Space Dependence of Dielectric Function in Si Crystal
• Self-Consistent Pseudopotential of As
• Pressure-Induced NaCl and β-Sn Structures of InSb
• The Effective Mass Equation for the Multi-Valley Semiconductors
• Exciton-L0 Phonon Scattering in Cu_2O
• Effective Electron-Hole Interaction in Shallow Excitons
• Binding Energies of Yellow Exciton Series in Cu_2O
• Structural Phase Transition in InSb under Pressure
• Self-Consistent Pseudopotential of Si
• A Pseudopotential Approach to the Crystal Energy of Si
• Spin-Orbit Coupling in Ionic Crystals with Zincblende and Wurtzite Structures
• Local Field Correction and Acoustic Sum Rule for Si and Ge
• Nonlocal Pseudopotentials of Si and Ge
• Pseudopotential Approach to Anisotropies of Compton-Profiles of Si and Ge

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