Electronic Structure of Black Phosphorus in Tight Binding Approach
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概要
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The energy band structure of black phosphorus is calculated for the frst time using the tight binding approach. It is shown that black phosphorus is a narrow gap semiconductor with the direct energy gap at the zone edge in the (O O k.) direction. The pressure dependence of the energy gap is calculated to be - 2.61 x 10-2 eV/kbar, its experimental counterpart being -2.51 x 10-2 eV/kbar. The optical absorption and the electrical conductivity of black phosphorus single crystals are discussed in terms of the calculated band structure.
- 社団法人日本物理学会の論文
- 1981-10-15
著者
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Asahina Hideo
Department Of Physics Tohoku University
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Morita Akira
Department Of Basic Science Ishinomaki Senshu University
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Morita Akira
Department Of Physics Tohoku University
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Takao Yukihiro
Tokyo Sanyo Electric Co.
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