Theory of Impurity Levels. : II. Polar Crystals

スポンサーリンク

概要

• 論文の詳細を見る

• The many-body theory of impurity states developed in a previous paper is extended so as to include ionic polarizations in polar crystals. It is shown that the impurity potential is screened by the usual static dielectric constant at a great distance from the charged impurity center. However, the screening effects due to both electronic and ionic polarizations become ineffective rather rapidly at a distance equal to or less than the lattice constant from the impurity center. This result is used to explain the behavior of the electron mobility in PbTe at liquid helium temperature satisfactorily.

• 社団法人日本物理学会の論文
• 1963-10-05

著者

• Morita Akira

  Department Of Basic Science Ishinomaki Senshu University

• MORITA A.

  Department of Physics, Tohoku University

関連論文

• Revised Results for the Band Properties of Black Phosphorus
• The Energy Band Structure of Black Phosphorus and Angle-Resolved Ultraviolet Photoelectron Spectra
• Lattice Dynamics of Black Phosphorus.I.Valence Force Field Model
• Lattice Dynamics of Black Phosphorus.II.Adiabatic Bond Charge Model
• Photoconductive Decay Measurements on Semiconducting Black Phosphorus Crystals
• Photoconduction of Black Phosphorus in the Infrared Region
• Two-Dimensional Anderson Localization in Black Phosphorus Crystals Prepaerd by Bismuth-Flux Method
• Strucrural Stability and Band Structure of the Mentallic Phase of Phosphorus
• Electrical Properties of Black Phosphorus Single Crystals Prepared by the Bismuth-Flux Method
• MC-07 DISK ERASER FOR HDD SERVO PATTERN BY HIGHLY EFFICIENT PERMANENT MAGNET MATRIX
• EFFECTS OF AN ANTIULCER AGENT, N-ACETYL-L-GLUTAMINE ALUMINUM COMPLEX (KW-110) ON THE DUODENAL AND GASTRIC ULCER MODELS IN THE RAT
• A Pressure-Induced Isostructural Transition in Black Phosphorus
• On the Shape of Electron-Hole Droplets in Highly Excited Anisotropic Semiconductors : Application to Uniaxially Stressed Ge and Si
• Electronic Structure of Black Phosphorus in Self-Consistent Pseudopotential Approach
• High-Temperature Series Analysis for the Classical n-Vector Model with a Free Surface : Condensed Matter and Statistical Physics
• Calculation of the Migration Energy of the Interstitial in Si and Ge
• Electron-Phonon Interaction and Anisotropic Mobility in Black Phosphorus
• Bond Charges and Crystal Pseudopotential in Black Phosphorus
• Spin-Orbit Coupling in Ionic Crystals with Zincblende and Wurtzite Structures
• Charge Distribution among Graphite Layers in High-Stage Alkali-Graphite Intercalation Compounds
• Theoretical Investigation of the X-Ray Level Widths of Light Metals
• Theory of Impurity Levels
• Collective Excited States and Dielectric Constant in Insulators
• Perturbation Theory of Covalent Crystals. : II. Lattice Vibration Spectra in Si and Ge
• Edge Structure of the Fundamental Optical Absorption of Alkali Halide Crystals
• The Crystal Binding Energies of the IV-VI Semiconductors
• Electronic Structure of Black Phosphorus in Tight Binding Approach
• Perturbation Theory of Covalent Crystals. : III. Calculation of Formation and Migration Energies of a Vacancy in Si and Ge
• Shallow Donor Potential in Silicon
• A Pseudopotential Approach to the Structure of As. : II. Use of an Untruncated Potential
• The Transverse Effective Charges of the IV-VI Semiconductors
• A Pseudopotential Approach to the Structure of As
• Theory of Impurity Levels. : II. Polar Crystals
• Chemical Splitting of Ground State of Lithium Donor in Silicon
• Theory of Sofr X-Ray Emission spectra of Light Metals
• A highly selective transannular route to trans-trans-1,2,3,3a,4,5,9,10,10a,10b-decahydropyrenes from (2.2)metacyclophanes.
• Preparation of Black Phosphorus Single Crystals by a Completely Closed Bismuth-Flux Method and Their Crystal Morphology
• Theory of Lattice Magnetic Susceptibility of Semiconductors

もっと見る 閉じる

スポンサーリンク