Atomic-Scale Control of Surface Reconstruction on Ge(001) by Scanning Tunneling Microscopy at 80 K

概要

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The reconstruction of a clean Ge(001) surface is controlled at the atomic scale by the temporal change in the sample bias voltage during scanning tunneling microscopy (STM) observation at 80 K. A positive voltage pulse on the $c(4{\times}2)$-reconstructed region flips the buckled dimers only in the dimer row right under the STM tip apex, and creates a wire of $p(2{\times}2)$ reconstruction extending along the dimer row. An artificial superstructure is made on the $c(4{\times}2)$ surface by inverting the buckling of the target dimer rows periodically and forming $p(2{\times}2)$ wires side by side. A negative voltage pulse on the $p(2{\times}2)$ region creates a local $c(4{\times}2)$-reconstructed area near the point of pulse. Its size can be reduced to $1.6\,\text{nm} \times 2.8\,\text{nm}$ by manipulating the voltage of the pulse.
Japan Society of Applied Physicsの論文
2004-03-15