Multiple Electronic Excitation Using Scanning Tunneling Microscopy on Ge(001)
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概要
- 論文の詳細を見る
On the Ge(001) surface, it has previously been shown that a single-electron excitation process induces a local and reversible superstructure transformation between $c(4\times2)$ and $ p(2\times2)$ by scanning tunneling microscopy. A structure transformation in the direction opposite to that of the previous result is demonstrated by increasing the tunneling current in the electron injection to the surface. In addition, the increased tunneling current shortens the range of hot electron propagation in the surface state. The observed results are attributed to the local increase in surface lattice temperature by a multiple electronic excitation process.
- Physical Society of Japanの論文
- 2009-06-15
著者
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Komori Fumio
Institute For Solid State Physics University Of Tokyo
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Nakatsuji Kan
Institute For Solid State Physics University Of Tokyo
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Takagi Yasumasa
Institute For Solid State Physics University Of Tokyo
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Tomatsu Kota
Institute For Solid State Physics University Of Tokyo
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Tomatsu Kota
Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581
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Nakatsuji Kan
Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581
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Komori Fumio
Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581
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