Local and Reversible Change of the Reconstruction on Ge(001) Surface between c(4×2) and p(2×2) by Scanning Tunneling Microscopy (Condensed Matter: Structure, Mechanical and Thermal Properties)
スポンサーリンク
概要
- 論文の詳細を見る
The reconstruction on a Ge(001) surface is locally and reversibly changed between c(4×2) and p(2×2) by controlling the bias voltage of a scanning tunneling microscope (STM) at 80 K. It is c(4×2) with the sample bias voltage V_b ≤ -0.7 V. This structure can be maintained with V_b ≤ 0.6 V. When V_b, is higher than 0.8 V during the scanning, the structure changes to p(2×2). This structure is then maintained with V_b ≥ -0.6 V. The observed local change of the reconstruction with hysteresis is attributed to the energy transfer process from the tunneling electron to the Ge lattice in the electric field under the STM tip.
- 社団法人日本物理学会の論文
- 2003-10-15
著者
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Nakatsuji Kan
Institute for Solid State Physics, University of Tokyo
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Komori Fumio
Institute for Solid State Physics, University of Tokyo
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Komori F
Institute For Solid State Physics University Of Tokyo:crest Japan Science And Technology Cooperation
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Komori Fumio
Institute For Solid State Physics University Of Tokyo
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Nakatsuji K
Institute For Solid State Physics University Of Tokyo
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Nakatsuji K
Department Of Material Physics Faculty Of Engineering Science Osaka University
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Nakatsuji Kan
Institute For Solid State Physics University Of Tokyo
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TAKAGI Yasumasa
Institute for Solid State Physics, University of Tokyo
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YOSHIMOTO Yoshihide
Institute for Solid State Physics, University of Tokyo
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Takagi Yasumasa
Institute For Solid State Physics University Of Tokyo
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Yoshimoto Y
Institute For Solid State Physics University Of Tokyo
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KOMORI Fumio
Department of Physics, University of Tokyo
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