Nonlocal Manipulation of Dimer Motion at Ge(001) Clean Surface via Hot Carriers in Surface States(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
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概要
- 論文の詳細を見る
Nonlocal one-dimensional motions of a topological defect are induced by electron tunneling through the dangling-bond states on the clean Ge(001) surface using scanning tunneling microscopy below 80 K. The direction of the motion depends both on the energy of the carriers in the surface state and on the distance between the defect and the tunneling point. The results are interpreted using an electronic excitation model by hot carriers injected into the surface states. The critical distance of the motion is anisotropic and consistent with the band structure of the surface states.
- 社団法人日本物理学会の論文
- 2005-12-15
著者
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Nakatsuji Kan
Institute for Solid State Physics, University of Tokyo
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Komori Fumio
Institute for Solid State Physics, University of Tokyo
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Komori F
Institute For Solid State Physics University Of Tokyo:crest Japan Science And Technology Cooperation
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Komori Fumio
Institute For Solid State Physics University Of Tokyo
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Nakatsuji K
Institute For Solid State Physics University Of Tokyo
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Nakatsuji K
Department Of Material Physics Faculty Of Engineering Science Osaka University
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Nakatsuji Kan
Institute For Solid State Physics University Of Tokyo
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TAKAGI Yasumasa
Institute for Solid State Physics, University of Tokyo
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YOSHIMOTO Yoshihide
Institute for Solid State Physics, University of Tokyo
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Takagi Yasumasa
Institute For Solid State Physics University Of Tokyo
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Yoshimoto Y
Institute For Solid State Physics University Of Tokyo
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KOMORI Fumio
Department of Physics, University of Tokyo
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