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ULSI Device Development Laboratories, NEC Corporation | 論文
- Polarization Dependence of Electric Field Intensity Distributions in Photoresist Films
- 0.25 μm Electron Beam Direct Writing Techniques for 256 Mbit Dynamic Random Access Memory Fabrication
- Application of KrF Excimer Laser Lithography to 256Mb DRAM Fabrication (Special Issue on LSI Memories)
- On the Reaction Scheme for Ti/TiN Chemical Vapor Deposition (CVD) Process Using TiCl_4
- Dual Damascene Interconnect Technology for 130-nm-node Complementary Metal-Oxide-Semiconductor Devices Using Ladder-Oxide Film
- Analysis of Electric Field Distribution in Novel GaAs MESFET with a Field-Modulating Plate
- Sizes and Numbers of Particles Being Capable of Causing Pattern Defects in Semiconductor Device Manufacturing (Special Issue on Scientific ULSI Manufacturing Technology)
- RuO_2/TiN-Based Storage Electrodes for (Ba, Sr)TiO_3 Dynamic Random Access Memory Capacitors
- Influence of Strontium Impurities on Silicon Substrates during Thermal Processing
- Boron Penetration and Hot-Carrier Effects in Surface-Channel PMOSFETs with p^+ Poly-Si Gates
- Dissolution Kinetics Analysis for Chemically Amplified Deep Ultraviolet Resist
- Carbon Ion Implantation in GaAs
- Thermal Stability in Al/Ti/GaAs Schottky Barrier
- Silicon Surface Imperfection Probed with a Novel X-Ray Diffraction Technique and Its Influence on the Reliability of Thermally Grown Silicon Oxide
- Lateral Diffusion Distance Measurement of 40-80 nm Junctions by Etching/TEM-Electron Energy Loss Spectroscopy Method
- Theoretical Studies on the Dielectric Breakdown of the SiO_2 Thin Films
- Improvement of Refresh Characteristics by SIMOX Technology for Giga-bit DRAMs (Special Issue on ULSI Memory Technology)
- 0.15 μm Electron Beam Direct Writing for Gbit Dynamic Random Access Memory Fabrication
- A Precise SOI Film Thickness Measurement Including Gate Depletion and Quantum Effects
- Effect of Low-Dose Ion Implantation on the Stress of Low-Pressure Chemical Vapor Deposited Silicon Nitride Films