スポンサーリンク
ULSI Device Development Laboratories, NEC Corporation | 論文
- Measuring Contact Resistance of a Poly-Silicon Plug on a Lightly Doped Single-Diffusion Region in DRAM Cells(Special Issue on Microelectronic Test Structures)
- Critical Dimension Controllability Evaluation Based on Process Error Distribution for 150 nm Devices
- Resist Heating in Cell Projection Electron Beam Direct Writing
- Improved Proximity Effect Correction Technique Suitable for Cell Projection Electron Beam Direct Writing System
- Hierarchical Word-Line Architecture for Large Capacity DRAMs (Special Issue on Circuit Technologies for Memory and Analog LSIs)
- Improved Registration Accuracy in E-Beam Direct Writing Lithography
- Analysis of Fluorocarbon Film Deposited by Highly Selective Oxide Etching
- Two-Dimensional Dopant Profiling of nMOSFETs with Shallow-Extensions Using Electrochemical Etching Technique
- An Analytical Modeling of Three Primary Wiring Capacitance Components for Multi-Layer Interconnect Structure
- Wafer Treatment Using Electrolysis-Ionized Water
- An FET Coupled Logic (FCL) Circuit for Multi-Gb/s, Low Power and Low Voltage Serial Interface BiCMOS LSIs (Special Issue on Ultra-High-Speed IC and LSI Technology)
- A Distributive Serial Multi-Bit Parallel Test Scheme for Large Capacity DRAMs (Special Section on High Speed and High Density Multi Functional LSI Memories)
- Accuracy Evaluation of Representative Figure Method for Proximity Effect Correction
- Gate Electrode Etching Using a Transformer Coupled Plasma
- Effect of Organic Compounds on Gate Oxide Reliability
- Copper Adsorption Behavior on Silicon Substrates (Special Issue on Sub-Half Micron Si Device and Process Technologies)
- An Advanced BSG Self-Aligned (A-BSA) Transistor Technology for High Speed IC Implementation
- Polymerization for Highly Selective SiO_2 Plasma Etching
- A Crossing Charge Recycle Refresh Scheme with a Separated Driver Sense-Amplifier for Gb DRAMs (Special Issue on ULSI Memory Technology)
- ULSIデバイスに於るウェ-ハ仕様と設計ル-ル--パ-ティクル,平面度,不純物分布のバラツキ〔英文〕