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ULSI Device Development Laboratories, NEC Corporation | 論文
- Pulse-mode Selective Metal-organic Vapor Phase Epitaxy Method for Migration Enhancement and High-quality Strained InGaAsP Multi-quantum Well Structure
- Optimization of Optical Parameters in KrF Excimer Laser Lithography for Quarter-Micron Lines Pattern (Special Issue on Quarter Micron Si Device and Process Technologies)
- Post-Metal-CMP Cleaning Using Oxalic Acid
- A New Technique for Quantitative Analysis of Metallic Contamination inside Deep-Submicron-Diameter Holes
- Study of Cu Contamination Removal Using Electrolytic Ionized Water
- Effects of Field Edge Steps on Electrical Gate Linewidth Measurements (Special Issue on Microelectronic Test Structure)
- Enhancement of Reactivity in Au Etching by Pulse-Time-Modulated Cl2 Plasma
- 7-Mask Self-Aligned SiGe Base Bipolar Transistors with f_T of 80 GHz
- 20V Operation Power GaAs MESFET with a Field-Modulating Plate
- SENSITIVITY COEFFICIENTS OF PIRANI GAUGE FOR VARIOUS ATOMS AND MOLECULES
- High Performance n/p Junction Characteristics Using High Temperature RTA in Conjunction with H2 Treatment
- Lateral Diffusion Distance Measurement for 40-80nm Junctions by Etching/TEM-EELS Method
- Oxygen Precipitation Behavior in Bonded SOI Wafers
- Ruthenium Film Etching and Cleaning Process Using Cerium Ammonium Nitrate (CAN)-Nitric Acid
- Fluorine-Related Defects in BF2+-Implanted Si Probed by Monoenergetic Positron Beams
- Low Temperature Deposition of (Ba, Sr)TiO3 Films by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition