High Performance n/p Junction Characteristics Using High Temperature RTA in Conjunction with H2 Treatment

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概要

• 論文の詳細を見る
• 1998-09-07

著者

• HAMADA K.

  ULSI Device Dev. Labs., NEC Corp.

• Kitano T.

  Ulsi Device Development Laboratories Nec Corporation

• Kitano T.

  Ulsi Device Dev. Labs. Nec Corp.

• MIYAZAKI S.

  ULSI Device Development Laboratories, NEC Corporation

関連論文

• High Energy B Implantation for Fe Gettering ; Evaluation of 7.5nm Thick Gate Oxide Reliability
• Evaluation of Dry-Etching Damage Introduced into Si by Schottky Junction Characteristics
• High Performance n/p Junction Characteristics Using High Temperature RTA in Conjunction with H2 Treatment

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