High Energy B Implantation for Fe Gettering ; Evaluation of 7.5nm Thick Gate Oxide Reliability

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概要

• 論文の詳細を見る
• 1996-08-26

著者

• Eaglesham D.

  Lucent Technologies

• HAMADA K.

  ULSI Device Dev. Labs., NEC Corp.

• HAYASHI T.

  ULSI Device Dev. Labs., NEC Corp.

• POATE J.

  Lucent Technologies

• SAITO S.

  ULSI Device Dev. Labs., NEC Corp.

関連論文

• High Energy B Implantation for Fe Gettering ; Evaluation of 7.5nm Thick Gate Oxide Reliability
• Evaluation of Dry-Etching Damage Introduced into Si by Schottky Junction Characteristics
• High Performance n/p Junction Characteristics Using High Temperature RTA in Conjunction with H2 Treatment
• Lateral Diffusion Distance Measurement for 40-80nm Junctions by Etching/TEM-EELS Method

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