HAMADA K. | ULSI Device Dev. Labs., NEC Corp.
スポンサーリンク
概要
関連著者
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HAMADA K.
ULSI Device Dev. Labs., NEC Corp.
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Kitano T.
Ulsi Device Dev. Labs. Nec Corp.
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Eaglesham D.
Lucent Technologies
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HAYASHI T.
ULSI Device Dev. Labs., NEC Corp.
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POATE J.
Lucent Technologies
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SAITO S.
ULSI Device Dev. Labs., NEC Corp.
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Kitano T.
Ulsi Device Development Laboratories Nec Corporation
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MIYAZAKI S.
ULSI Device Development Laboratories, NEC Corporation
著作論文
- High Energy B Implantation for Fe Gettering ; Evaluation of 7.5nm Thick Gate Oxide Reliability
- Evaluation of Dry-Etching Damage Introduced into Si by Schottky Junction Characteristics
- High Performance n/p Junction Characteristics Using High Temperature RTA in Conjunction with H2 Treatment