A New Technique for Quantitative Analysis of Metallic Contamination inside Deep-Submicron-Diameter Holes
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概要
- 論文の詳細を見る
- 1996-08-26
著者
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Aoto N.
Ulsi Device Development Laboratories Nec Corporation
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AOKI H.
ULSI Device Development Laboratories, NEC Corporation
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YAMASAKI S.
ULSI Device Development Laboratories, NEC Corporation
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- A New Technique for Quantitative Analysis of Metallic Contamination inside Deep-Submicron-Diameter Holes
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- Ruthenium Film Etching and Cleaning Process Using Cerium Ammonium Nitrate (CAN)-Nitric Acid