Sizes and Numbers of Particles Being Capable of Causing Pattern Defects in Semiconductor Device Manufacturing (Special Issue on Scientific ULSI Manufacturing Technology)

概要

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The scaling laws between the design rules and the smallest sizes and numbers of particles capable of causing pattern defects and scrapping dies in semiconductor device manufacturing are described. Simulation with electromagnetic waveguide model indicates the possibility that particles, the sizes of which are of comparable order or even smaller than the wavelength of the lithography irradiation sources, are capable of causing pattern defects. For example, in the future O.25 μm-design-rule era, the critical sizes of Si, Al, and SiO_2 particles are simulated as 120 nm × 120 nm, 120 nm × 120 nm, and 560 nm × 560 nm, respectively, in the case of 0.7 μm-thick chemically-amplified positive photoresist with 47 nm-thick top anti-reflective coating films. Future giga-scale integration era is also predicted.
社団法人電子情報通信学会の論文
1996-03-25