Standing Wave Effect of Various Illumination Methods in 0.25 μm KrF Excimer Laser Lithography
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-12-30
著者
-
Uchiyama T
Nec Corp. Kanagawa Jpn
-
Uchiyama Takayuki
Ulsi Device Development Laboratories Nec Corporation
-
HASHIMOTO Takeo
ULSI Device Development Laboratories, NEC Corporation
-
KASAMA Kunihiko
ULSI Device Development Laboratories, NEC Corporation
-
SHIOIRI Satomi
Opto-Electronics Research Laboratories, NEC Corporation
-
Hashimoto T
Niigata Univ. Niigata Jpn
-
Kasama K
Ulsi Device Development Laboratory Nec Corporation
-
Kasama Kunihiko
Ulsi Device Development Laboratories Nec Corporation
-
Shioiri Satomi
Opto-electronics Research Laboratories Nec Corporation
関連論文
- Observation of a Visible Line Emission from RF and ECR Oxygen Plasmas
- Reticle Critical Dimension Latitude for Fabrication of 0.18 μm Line Patterns
- Standing Wave Effect of Various Illumination Methods in 0.25 μm KrF Excimer Laser Lithography
- Relationship between Remaining Solvent and Acid Diffusion in Chemically Amplified Deep Ultraviolet Resists
- Luminescent properties of amorphous Al_2O_3 prepared by sol-gel method
- Sizes and Numbers of Particles Being Capable of Causing Pattern Defects in Semiconductor Device Manufacturing (Special Issue on Scientific ULSI Manufacturing Technology)
- Dissolution Kinetics Analysis for Chemically Amplified Deep Ultraviolet Resist
- Critical Dimension Controllability Evaluation Based on Process Error Distribution for 150 nm Devices
- Novel Method for Generating Large Mesopores in an Amorphous Silica-Alumina by Controlling the Pore Size with the Gel Skeletal Reinforcement and Its Catalytic Cracking Properties as a Catalyst Matrix
- Optimization of Optical Parameters in KrF Excimer Laser Lithography for Quarter-Micron Lines Pattern (Special Issue on Quarter Micron Si Device and Process Technologies)
- Redistribution Process of Oxygen Atoms in Separation-by-Implanted-Oxygen (SIMOX) Substrates