Redistribution Process of Oxygen Atoms in Separation-by-Implanted-Oxygen (SIMOX) Substrates
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概要
- 論文の詳細を見る
To form separation-by-implanted-oxygen (SIMOX) substrates, oxygen ions were implanted into the conventional (100) single-crystal silicon substrates at 80keV to a dose of 1.0×10^<18>cm^<-2>, maintaining the substrate temperature at around 52O℃. Before and after post implantation annealing at 650-1280℃ for 2h, we examined silicon-on-insulator (SOI) structures of the SIMOX substrates using X-ray photoelectron spectroscopy (XPS), Fourier transform infrared absorption spectroscopy (FTIR), cross-sectional transmission electron microscopy (XTEM), and Rutherford backscattering spectroscopy (RBS). On the basis of the experimental results of the XPS measurements (depth profiles of oxygen concentration and Si_<2p> spectrum at around the binding energy of 99-105eV) and the FTIR measurements (the peak position and the full width at half-maximum of the absorption peak associated with the Si-O stretching mode at around 1080cm^<-1>), together with XTEM images and RBS spectra, we clarified that inward migration of the implanted oxygen atoms is one of the primary processes for the formation of the SOI structure, and discussed the redistribution process of the implanted oxygen atoms as a function of the annealing temperature.
- 社団法人応用物理学会の論文
- 1998-02-15
著者
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YOSHINO Akira
C&C LSI Development Division, NEC Corporation
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Kasama Kunihiko
Ulsi Device Development Laboratories Nec Corporation
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