YOSHINO Akira | C&C LSI Development Division, NEC Corporation
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概要
関連著者
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YOSHINO Akira
C&C LSI Development Division, NEC Corporation
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Okumura Koichiro
Ulsi Device Development Laboratories Nec Corporation
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Okumura Koichiro
System Asic Division Ulsi Device Development Laboratories Nec Corporation
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Hamatake Nobuhisa
ULSI Device Development Lab., NEC Corporation
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KUMAGAI Kouichi
C&C LSI Development Division, NEC Corporation
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KUROSAWA Susumu
ULSI Device Development Laboratories, NEC Corporation
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Kumagai Kouichi
C&c Lsi Development Division Nec Corporation
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Hamatake Nobuhisa
Ulsi Device Development Laboratories Nec Corporation
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Hamatake Nobuhisa
Ulsi Device Development Lab. Nec Corporation
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Ma T‐p
Center For Microelectronic Materials & Structures And Department Of Electrical Engineering Yale
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Yoshino A
Nec Corp. Kanagawa Jpn
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Okumura K
Toshiba Corp. Yokohama Jpn
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Kurosawa S
Ulsi Device Development Laboratories Nec Corporation
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Kurosawa Susumu
Ulsi Device Development Laboratories Nec Corporation
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MA Tso-Ping
Center for Microelectronic Materials & Structures, and Department of Electrical Engineering, Yale Un
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Kasama Kunihiko
Ulsi Device Development Laboratories Nec Corporation
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Yoshino Akira
C&c Lsi Development Division Nec Corporation
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Yoshino Akira
C&C LSI Development Division, NEC Corporation
著作論文
- The Most Essential Factor for High-Speed, Low-Power 0.35 μm Complementary Metal-Oxide-Semiconductor Circuits Fabricated on Separation-by-Implanted-Oxygen (SIMOX) Substrates
- Front-and Back-Interface Trap Densities and Subthreshold Swings of Fully Depleted Mode Metal-Oxide-Semiconductor Transistors Fabricated on Separation-by-Implanted-Oxygen Substrates
- Redistribution Process of Oxygen Atoms in Separation-by-Implanted-Oxygen (SIMOX) Substrates