Front-and Back-Interface Trap Densities and Subthreshold Swings of Fully Depleted Mode Metal-Oxide-Semiconductor Transistors Fabricated on Separation-by-Implanted-Oxygen Substrates

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By measuring the charge pumping current (I_<cP>) and the subthreshold swing, we examined the front-and back-interface trap densities (D_<fit> and D_<bit>) of long channel N-type metal-oxide-semiconductor transistors fabricated on separation-by-implanted-oxygen (SIMOX) substrates, as a function of the total oxygen implantation dose. The front-channel subthreshold swing (_f) measured in the coupled condition was larger than that calculated with D_<fit> and D_<bit> obtained from I_<CP>. However, dose dependences of the D_<fit> and D_<bit> obtained from I_<CP> were consistent with those of the front-and back-channel peak mobilities, while those obtained from the subthreshold swings were not. These seemingly contradictory results can be satisfactorily explained by the existence of lateral nonuniformities (LNU) in the front-and the back-cannel local threshold voltages. We propose that the experimentally determined S_f can be used as an index of LNU in the SIMOX and other silicon-on-insulator substrates, just by comparing it with the theoretical value of S_f.
社団法人応用物理学会の論文
1998-07-15