The Most Essential Factor for High-Speed, Low-Power 0.35 μm Complementary Metal-Oxide-Semiconductor Circuits Fabricated on Separation-by-Implanted-Oxygen (SIMOX) Substrates
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-11-15
著者
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Okumura Koichiro
Ulsi Device Development Laboratories Nec Corporation
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Okumura Koichiro
System Asic Division Ulsi Device Development Laboratories Nec Corporation
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Hamatake Nobuhisa
ULSI Device Development Lab., NEC Corporation
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YOSHINO Akira
C&C LSI Development Division, NEC Corporation
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KUMAGAI Kouichi
C&C LSI Development Division, NEC Corporation
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KUROSAWA Susumu
ULSI Device Development Laboratories, NEC Corporation
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Kumagai Kouichi
C&c Lsi Development Division Nec Corporation
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Hamatake Nobuhisa
Ulsi Device Development Laboratories Nec Corporation
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Hamatake Nobuhisa
Ulsi Device Development Lab. Nec Corporation
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Okumura K
Toshiba Corp. Yokohama Jpn
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Kurosawa S
Ulsi Device Development Laboratories Nec Corporation
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Kurosawa Susumu
Ulsi Device Development Laboratories Nec Corporation
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Yoshino Akira
C&c Lsi Development Division Nec Corporation
関連論文
- A PLL-Based Programmable Clock Generator with 50- to 350-MHz Oscillating Range for Video Signal Processors (Special Issue on Multimedia, Analog and Processing LSIs)
- The Most Essential Factor for High-Speed, Low-Power 0.35 μm Complementary Metal-Oxide-Semiconductor Circuits Fabricated on Separation-by-Implanted-Oxygen (SIMOX) Substrates
- Collisional Quenching Rates by He, N_2 and CH_4 for the 4D_ State in SrII
- Determination of Collisional Quenching Rate for the 4D_ State in SrII
- Front-and Back-Interface Trap Densities and Subthreshold Swings of Fully Depleted Mode Metal-Oxide-Semiconductor Transistors Fabricated on Separation-by-Implanted-Oxygen Substrates
- An Analytical Modeling of Three Primary Wiring Capacitance Components for Multi-Layer Interconnect Structure
- Redistribution Process of Oxygen Atoms in Separation-by-Implanted-Oxygen (SIMOX) Substrates