Okumura Koichiro | System Asic Division Ulsi Device Development Laboratories Nec Corporation
スポンサーリンク
概要
関連著者
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Okumura Koichiro
System Asic Division Ulsi Device Development Laboratories Nec Corporation
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Okumura K
Toshiba Corp. Yokohama Jpn
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YODA Jun
National Research Laboratory of Metrology
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Hong F‐l
National Res. Lab. Metrology (nrlm) Ibaraki Jpn
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Hong Feng-lei
National Research Laboratory Of Metrology
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Hong Feng-lei
National Metrology Institute Of Japan (nmij)/national Institute Of Advanced Industrial Science And T
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Hong Feng-lei
National Institute Of Advanced Industrial Science And Technology (aist) Aist Tsukuba Central 3
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HIRANO Iku
National Research Laboratory of Metrology
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OKUMURA Kenichiro
National Research Laboratory of Metrology
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ONAE Atsushi
National Research Laboratory of Metrology
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Yoda J
National Res. Lab. Metrology Ibaraki Jpn
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Hirano I
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
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Hirano Iku
National Institute Of Advanced Industrial Science And Technology
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Onae A
National Metrology Institute Of Japan (nmij)/national Institute Of Advanced Industrial Science And T
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Onae Atsushi
National Metrology Institute Of Japan
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Yoda Jun
National Institute Of Advanced Industrial Science And Technology
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Okumura Koichiro
Ulsi Device Development Laboratories Nec Corporation
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Hamatake Nobuhisa
ULSI Device Development Lab., NEC Corporation
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YOSHINO Akira
C&C LSI Development Division, NEC Corporation
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KUMAGAI Kouichi
C&C LSI Development Division, NEC Corporation
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KUROSAWA Susumu
ULSI Device Development Laboratories, NEC Corporation
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Kumagai Kouichi
C&c Lsi Development Division Nec Corporation
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Hamatake Nobuhisa
Ulsi Device Development Laboratories Nec Corporation
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Hamatake Nobuhisa
Ulsi Device Development Lab. Nec Corporation
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Kurosawa S
Ulsi Device Development Laboratories Nec Corporation
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Kurosawa Susumu
Ulsi Device Development Laboratories Nec Corporation
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Yoshino Akira
C&c Lsi Development Division Nec Corporation
著作論文
- The Most Essential Factor for High-Speed, Low-Power 0.35 μm Complementary Metal-Oxide-Semiconductor Circuits Fabricated on Separation-by-Implanted-Oxygen (SIMOX) Substrates
- Collisional Quenching Rates by He, N_2 and CH_4 for the 4D_ State in SrII
- Determination of Collisional Quenching Rate for the 4D_ State in SrII