Okumura K | Toshiba Corp. Yokohama Jpn

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概要

• 同名の論文著者
• Toshiba Corp. Yokohama Jpnの論文著者

関連著者

• Okumura Koichiro

  System Asic Division Ulsi Device Development Laboratories Nec Corporation

• Okumura K

  Toshiba Corp. Yokohama Jpn

• YODA Jun

  National Research Laboratory of Metrology

• Hong F‐l

  National Res. Lab. Metrology (nrlm) Ibaraki Jpn

• Hong Feng-lei

  National Research Laboratory Of Metrology

• Hong Feng-lei

  National Metrology Institute Of Japan (nmij)/national Institute Of Advanced Industrial Science And T

• Hong Feng-lei

  National Institute Of Advanced Industrial Science And Technology (aist) Aist Tsukuba Central 3

• HIRANO Iku

  National Research Laboratory of Metrology

• OKUMURA Kenichiro

  National Research Laboratory of Metrology

• ONAE Atsushi

  National Research Laboratory of Metrology

• Yoda J

  National Res. Lab. Metrology Ibaraki Jpn

• Hirano I

  National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn

• Hirano Iku

  National Institute Of Advanced Industrial Science And Technology

• Onae A

  National Metrology Institute Of Japan (nmij)/national Institute Of Advanced Industrial Science And T

• Onae Atsushi

  National Metrology Institute Of Japan

• Yoda Jun

  National Institute Of Advanced Industrial Science And Technology

• Okumura Koichiro

  Ulsi Device Development Laboratories Nec Corporation

• Hamatake Nobuhisa

  ULSI Device Development Lab., NEC Corporation

• YOSHINO Akira

  C&C LSI Development Division, NEC Corporation

• KUMAGAI Kouichi

  C&C LSI Development Division, NEC Corporation

• KUROSAWA Susumu

  ULSI Device Development Laboratories, NEC Corporation

• Kumagai Kouichi

  C&c Lsi Development Division Nec Corporation

• Hamatake Nobuhisa

  Ulsi Device Development Laboratories Nec Corporation

• Hamatake Nobuhisa

  Ulsi Device Development Lab. Nec Corporation

• Kurosawa S

  Ulsi Device Development Laboratories Nec Corporation

• Kurosawa Susumu

  Ulsi Device Development Laboratories Nec Corporation

• Yoshino Akira

  C&c Lsi Development Division Nec Corporation

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著作論文

• The Most Essential Factor for High-Speed, Low-Power 0.35 μm Complementary Metal-Oxide-Semiconductor Circuits Fabricated on Separation-by-Implanted-Oxygen (SIMOX) Substrates
• Collisional Quenching Rates by He, N_2 and CH_4 for the 4D_ State in SrII
• Determination of Collisional Quenching Rate for the 4D_ State in SrII

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