Effect of Low-Dose Ion Implantation on the Stress of Low-Pressure Chemical Vapor Deposited Silicon Nitride Films
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概要
- 論文の詳細を見る
We investigated the effect of reducing stress in low-pressure chemical vapor deposited (LPCVD)-Si_3N_4 films by a low-dose ion implantation of P, Ar and As. The tensile stress of the Si_3N_4 films was eliminated by implanting these ions in the middle of the films in doses as low as 3×10^<13> to 1.2×10^<14> cm^<-2>. After annealing, although the stress of the implanted nitride films recovers partially, its value still does not reach that of the unimplanted films. The influence of implantation on the local oxidation of silicon (LOCOS) profile and the device characteristics is negligible.
- 社団法人応用物理学会の論文
- 1998-03-30
著者
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YAMAMOTO Ichiro
ULSI Device Development Laboratory, NEC Corporation
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NISHIMOTO Shozo
ULSI Device Development Laboratories, NEC Corporation
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Kasai Naoki
Ulsi Device Development Laboratories Nec Corporation
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Kasai Naoki
Ulsi Device Development Division Nec Electron Devices:(present Address)semiconductor Leading Edge Te
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Nishimoto Shozo
Ulsi Device Development Laboratories Nec Corporation
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Yamamoto Ichiro
Ulsi Device Development Laboratories Nec Corporation
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