Stress Elimination of LPCVD Silicon Nitride Films by Low-Dose Ion Implantation

スポンサーリンク

概要

• 論文の詳細を見る
• 1997-09-16

著者

• YAMAMOTO Ichiro

  ULSI Device Development Laboratory, NEC Corporation

• Nishimoto Shozo

  Ulsi Device Development Laboratories Nec Corporation

• Yamamoto Ichiro

  Ulsi Device Development Laboratories Nec Corporation

関連論文

• Low Temperature Recovery of Ru(Ba, Sr)TiO_3/Ru Capacitors Degraded by Forming Gas Annealing
• Low Temperature Deposition of (Ba, Sr)TiO_3 Films by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition
• Effect of Low-Dose Ion Implantation on the Stress of Low-Pressure Chemical Vapor Deposited Silicon Nitride Films
• Stress Elimination of LPCVD Silicon Nitride Films by Low-Dose Ion Implantation
• Effects of Field Edge Steps on Electrical Gate Linewidth Measurements (Special Issue on Microelectronic Test Structure)
• Low Temperature Deposition of (Ba, Sr)TiO3 Films by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition

スポンサーリンク