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ULSI Development Center, Mitsubishi Electric Corporation | 論文
- A Sub 1-V L-Band Low Noise Amplifier SOI CMOS(Special Section on Analog Circuit Techniques and Related Topics)
- A CAD-Compatible SOI-CMOS Gate Array Using 0.35 μm Partially-Depleted Transistors (Special Issue on Low-Power High-Speed CMOS LSI Technologies)
- Analyses of the Radiation-Caused Characteristics Change in SOI MOSFETs Using Field Shield Isolation
- Analysis and Optimization of Floating Body Cell Operation for High-Speed SOI-DRAM (Special Issue on Ultra-High-Speed IC and LSI Technology)
- The Influence of the Buried Oxide Defects on the Gate Oxide Reliability and Drain Leakage Currents of the Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors
- Suppression of Parasitic MOSFETs at LOCOS Edge Region in Partially Depleted SOI MOSFETs
- Analysis of the Delay Distributions of 0.5μm SOI LSIs (Special Issue on SOI Devices and Their Process Technologies)
- Features of SOI DRAM's and their Potential for Low-Voltage and/or Giga-Bit Scale DRAM's (Special Issue on ULSI Memory Technology)
- Comparison of Standard and Low-Dose Separation-by-Implanted-Oxygen Substrates for 0.15 μm SOI MOSFET Applications
- High-Speed SOI 1/8 Frequency Divider Using Field-Shield Body-Fixed Structure
- Comparison of Standard and Low-Dose SIMOX Substrates for 0.15μm SOI MOSFET Applications
- Low-Voltage Operation of a High-Resistivity Load SOI SRAM Cell by Reduced Back-Gate-Bias Effect
- Two-Dimensional Analytical Modeling of the Source/Drain Engineering Influemce on Short-Channel Effects in SOI MOSFET's
- Analytical Modeling of Short-Channel Behavior of Accumulation-Mode Transistors on Silicon-on-Insulator Substrate
- RTAによるチャネル構造制御を利用した最先端CMOS技術 (特集"LSI") -- (基盤技術)
- Impact of μA-ON-Current Gate-All-Around TFT (GAT) for Static RAM of 16Mb and beyond
- Impact of μ A-ON-Current Gate All-Around TFT (GAT) for 16MSRAM and Beyond
- Saturation Phenomenon of Stress-Induced Gate Leakage Current
- Modified Gate Re-Oxidation Technology for High-Performance Embedded Dynamic RAM by Self-Adjusted Gate Bird's Beak
- Highly Reliable SiO_2 Films Formed by UV-O_2 Oxidation