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ULSI Development Center, Mitsubishi Electric Corporation | 論文
- Highly Reliable SiO_2 Films Formed by UV-O_2 Oxidation
- Disk-Shaped Stacked Capacitor Cell for 256 Mb Dynamic Random-Access Memory
- Soft-Error Study of DRAMs with Retrograde Well Structure by New Evaluation Method (Special Issue on Quarter Micron Si Device and Process Technologies)
- Charge Collection Control Using Retrograde Well Tested by Proton Microprobe Irradiation
- Proposal of a Next-Generation Super Resolution Technique
- A 0.18 ★m 32 Mb Embedded DRAM Macro for 3-D Graphics Controller
- A Board Level Parallel Test Circuit and a Short Circuit Failure Repair Circuit for High-Density, Low-Power DRAMs (Special Issue on Circuit Technologies for Memory and Analog LSIs)
- High performance 0.2μm Dual Gate Complementary MOS Technologies by Suppression of Transient-Enhanced-Diffusion using Rapid Thermal Annealing
- Subquarter-micrometer Dual Gate Complementary Metal Oxide Semiconductor Field Effect Transistor with Ultrathin Gate Oxide of 2 nm
- 窒素イオン注入によるシリコン酸化膜窒化の活性化エネルギー
- Simulation of Dopant Redistribution During Gate Oxidation Including Transient-Enhanced Diffusion Caused by Implantation Damage
- Clarification of Nitridation Effect on Oxide Formation Methods
- Circuit-Level Electrothermal Simulation of Electrostatic Discharge in Integrated Circuits (Special lssue on SISPAD'99)
- 3-D Topography and Impurity Integrated Process Simulator (3-D MIPS) and Its Applications (Special Issue on TCAD for Semiconductor Industries)
- Realistic Scaling Scenario for Sub-100 nm Embedded SRAM Based on 3-Dimensional Interconnect Simulation(the IEEE International Conference on SISPAD '02)
- SOI/CMOS Circuit Design for High-Speed Communication LSIs (Special Issue on New Concept Device and Novel Architecture LSIs)
- Proximity Gettering of Heavy Metals by High-Energy Ion Implantation
- New P-MOSFET Hot-Carrier Degradation Model for Bi-Directional Operation
- Improvement of Surface Morphology of Epitaxial Silicon Film for Elevated Source/Drain Ultrathin Silicon-on-Insulator Complementary-Metal-Oxide-Semiconductor Devices
- Effect of Ultrathin Top Silicon Layers on the X-Ray Photoelectron Emission from the Buried Oxide in Silicon-on-Insulator Wafers