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Ntt Optoelectronics Laboratories | 論文
- DLTS Measurement on Electron-Irradiated GaAs-on-Si
- Dislocation Reduction in GaAs on Si by Thermal Cycles and InGaAs/GaAs Strained-Layer Superlattices
- Material Quality in GaAs-on-Si Grown by Metalorganic Molecular Beam Epitaxy
- Domain Structures of As-Adsorbed Si(100) Surface and GaAs Overlayer
- Growth of GaAs on Si Substrates by Metalorganic MBE Using Triethylgallium and Arsenic
- RHEED Intensity Observation during TEGa-As_4 Alternate Supply Growth of GaAs : Special Section : Solid State Devices and Materials 2 : III-V Compound Semiconductors Devices and Materials
- Tunneling Measurements of Thin Film Y-Ba-Cu-O/Nb Junctions
- Fabrication of High-T_c Oxide Superconductor Tunnel Junctions
- Excitonic Photon Absorption-Emission Characteristics in ZnCdSe-ZnSe Single-Quantum-Well Structures
- Structural and Optical Properties of In-Plane Ordered Metallo-Phthalocyanine Thin Films Formed on Sapphire by Organic Molecular Beam Deposition
- General-Purpose Device Simulation System with an Effective Graphic Interface
- A Novel Graphical Analysis Method for Double Crystal X-Ray Diffraction Measurements of Strained Layer Superlattices Grown on (100) Substrate
- A High Resolution Cathodoluminescence Microscopy Utilizing Magnetic Field : Semiconductors and Semiconductor Devices
- Single Transverse Mode Microcavity Laser with Ultralow Threshold
- Temperature Dependence of TaSiN Thin Film Resistivity from Room Temperature to 900℃ : Semiconductors
- Control of Grain Structure of Sputtering Lead-Zirconate-Titanate Thin Film Using Amorphous Lead-Titanate Buffer Layer
- Characterization of Sputtered Lead-Zirconate-Titanate Thin Films with Various Compositions
- Recovery of the Ferroelectric Properties of Hydrogen-Damaged Ir/Pb(Zr,Ti)O3/Ir Capacitors by Post Annealing
- Characterization of Switching Properties of Lead-Zirconate-Titanate Thin Films in Ti-Rich Phase
- Critical Thickness for the Si_Ge_x/Si Heterostructure