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Central Research Lab.Hitachi Ltd. | 論文
- Morphological Evolution of the InGaN-Based Quantum Well Surface due to a Reduced Density of Threading Dislocations in the Underlying GaN through Higher Growth Pressure
- Optical Properties of GaN Thin Films on Sapphire Substrates Characterized by Variable-Angle Spectroscopic Ellipsometry
- Increased Size of Open Hexagonally Shaped Pits due to Growth Interruption and Its Influence on InGaN/GaN Quantum-Well Structures Grown by Metalorganic Vapor Phase Epitaxy
- Characterization of InGaP/GaAs Heterojunction Bipolar Transistors with a Heavily Doped Base : Semiconductors
- Fully Strained Heavily Carbon-Doped GaAs Grown by Gas-Source Molecular Beam Epitaxy Using Carbontetrabromide and Its Application to InGaP/GaAs Heterojunction Bipolar Transistors
- A WSi Base Electrode and a Heavily-Doped Thin Base Layer for High-Speed and Low-Power InGaP/GaAs HBTs
- Fully Strained Heavily Carbon-Doped GaAs Using Carbontetrabromide by Gas-Source Molecular Beam Epitaxy and Its Application in InGaP/GaAs Heterojunction Bipolar Transistors
- New Technologies of a WSi Base Electrode and a Heavily-Doped Thin Base Layer for High-Performance InGaP/GaAs HBTs
- Observation of the Surface Recombination Current with an Ideality Factor of Unity in AlGaAs/GaAs Heterojunction Bipolar Transistors
- The Effect on Turn-On Voltage (V_) of AlGaAs/GaAs HBT's due to the Structure of the Emitter-Base Heterojunction
- On the Determination of the Specific Contact Resistance of Alloyed Contacts to n-GaAs
- Analysis of Leakage Current at Pd/AlGaN Schottky Barriers Formed on GaN Free-Standing Substrates
- Dependence of CdZnSe/ZnMgSSe Laser Diode Operating Characteristics on Band Gap and Net Acceptor Concentration of p-Type Cladding Layer
- Operating Current Dependence of CdZnSe/ZnMgSSe Laser Diodes on Band Gap and Carrier Concentration of P-Type Cladding Layer
- Reliability Study of C-Doped AlGaAs/GaAs Heterojunction Bipolar Transistors with Half-Micron-Wide Emitters
- Effects of Rapid Thermal Annealing on Bias-Stress-Induced Base Leakage in InGaP/GaAs Collector-Up Heterojunction Bipolar Transistors Fabricated with B Ion Implantation(High-Speed HBTs and ICs,Heterostructure Microelectronics with TWHM2005
- Stress Effect on Current-Induced Degradation of Be-Doped AlGaAs/GaAs Heterojunction Bipolar Transistors
- Simulation of the Effect of Emitter Doping on the Delay Time in AlGaAs/GaAs Heterojunction Bipolar Transistors
- Experimentally Proven Equation for the Collector-Depletion-Layer Transit Time of npn Bipolar Transistors
- Influence of Substrate Orientation on Be Transport during Molecular Beam Epitaxy of AlGaAs/GaAs Heterojunction Bipolar Transistors