スポンサーリンク
Central Research Lab.Hitachi Ltd. | 論文
- Influence of Substrate Misorientation on Surface Morphology of Be-Doped GaAs Grown by MBE
- Determination of Lateral Extension of Extrinsic Photon Recycling in p-GaN by Using Transmission-Line-Model Patterns Formed with GaN p--n Junction Epitaxial Layers
- Substrate Misorientation Effect on Be Transport during MBE Growth of GaAs
- Dual-Sublattice Modeling and Semi-Atomistic Simulation of Boron Diffusion in 4H-Silicon Carbide
- Determination of Lateral Extension of Extrinsic Photon Recycling in p-GaN by Using Transmission-Line-Model Patterns Formed with GaN p-n Junction Epitaxial Layers (Special Issue : Recent Advances in Nitride Semiconductors)