Lucovsky Gerald | Department Of Physics Materials Science And Engineering And Electrical And Computer Engineering Nort
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概要
- 同名の論文著者
- Department Of Physics Materials Science And Engineering And Electrical And Computer Engineering Nortの論文著者
関連著者
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Lucovsky Gerald
Department Of Physics Materials Science And Engineering And Electrical And Computer Engineering Nort
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LUCOVSKY Gerald
Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering,
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Niimi Hiro
Department Of Physics North Carolina State University
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NIIMI Hiro
Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering,
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Yang Hong
Department Of Information Engineering Xidian University
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Lucovsky G
Departments Of Physics And Electrical And Computer Engineering North Carolina State University
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Yang Hong
Department Of Chemistry North Carolina State University
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Hattangady Sunil
Department Of Materials Science And Engineering North Carolina State University
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Lee David
Department Of Materials Science And Engineering North Carolina State University
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Niimi H
Hokkaido Univ. Sapporo Jpn
著作論文
- Chemical Bonding at Interfaces between Si (100) and High-K Dielectrics : Competing Effects of i) Process Gas-Substrate and ii) Film Deposition Reactions
- A Unified Chemical Bonding Model for Defect Generation in a-SiH: Photo-Induced Defects in Photovoltaic Devices and Current-Induced Defects in TFTs.
- Characterization of the Interface between Plasma-Oxidized SiO_2 and Crystalline Silicon by Cathodoluminescence Spectroscopy (CLS)
- Monolayer Nitrogen-Atom Distributions in Ultrathin Gate Dielectrics by Low-Temperature Low-Thermal-Budget Processing
- Integration of Plasma-Assisted and Rapid Thermal Processing for Low-Thermal Budget Preparation of Ultra-Thin Dielectrics for Stacked-Gate Device Structures
- Many-Electron Multiplet Theory Applied to O-Atom Vacancies in High-$\kappa$ Dielectrics
- Controlled Nitrogen Incorporation at Si-SiO_2 Interfaces by Remote Plasma-Assisted Processing
- Plasma Deposition of HfO_2 and TiO_2 onto Plasma-Nitrided Ge Surfaces
- A Unified Model for Charge Defect Generation in a-SiH : Photo-Induced Defects in Photovoltaic (PV) Devices and Current Induced Defects in Thin Film Transistors (TFTs)
- Differences between the Electrical Properties of Nitrided Si-SiO_2 Interfaces Formed by (a) Post-Oxidation, Remote Plasma-Assisted Nitridation and (b) Remote Plasma-Assisted Deposition