Local Atomic Bonding in Fluorinated Silicon Oxides: Bond-Ionicity-Controlled Contributions of Infrared-Active Vibrations to the Static Dielectric Constant

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概要

• 論文の詳細を見る

• There is considerable interest in insulating films with static dielectric constants lower than that of SiO_2. One alloy system that has attracted much recent attention is F-doped SiO_2 or Si-O-F. This paper i) reviews the published experimental results for the infrared optical properties of Si-O-F alloys, ii) discusses the bonding arrangements of F atoms in the SiO_2 network structure, iii) develops a procedure for characterizing the composition of these materials in a pseudo-binary alloy notation, iv) explains the reductions in the dielectric constant induced by F atoms in terms of bond-ionicity-controlled contributions from electronic and vibrational dipole transitions, and v) addresses briefly the chemical stability of the films.

• 社団法人応用物理学会の論文
• 1997-03-30

著者

• Yang Hong

  Department Of Information Engineering Xidian University

• Lucovsky Gerald

  Department Of Physics Materials Science And Engineering And Electrical And Computer Engineering Nort

• Lucovsky Gerald

  Departments Of Physics Materials Science And Engineering And Electrical And Computer Engineering Nor

• Yang Hong

  Department Of Chemistry North Carolina State University

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