Band-Edge Electronic Structure and Pre-existing Defects in Remote Plasma Deposited Non-crystalline SiO
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概要
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The following topics are addressed: (i) X-ray absorption spectroscopy (XAS) studies of plasma deposited non-crystalline (nc-) SiO<inf>2</inf>and GeO<inf>2</inf>emphasizing (a) band-edge states and (b) pre-existing bonding defects, and (ii) interpretation of X-ray absorption and photoemission spectra based on many electron theory, including two-electron singlet and triplet electron spin states. The articles also addresses electronic and defect structures in emerging device structures incorporating (GeO<inf>2</inf>)<inf>x</inf>(SiO<inf>2</inf>)<inf>1-x</inf>alloys, and bonding between Ge and Si substrates and elemental and/or alloy nc-SiO<inf>2</inf>and nc-GeO<inf>2</inf>. The most significant results are identification of local atomic structure of pre-existing defects in the elemental oxides. Defects are created during processing, and are qualitatively different than those produced by X-ray, \gamma-ray, or high energy electron stressing and detected by second derivative XAS.
- 2013-04-25
著者
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Lucovsky Gerald
Department Of Physics Materials Science And Engineering And Electrical And Computer Engineering Nort
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Lucovsky Gerald
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202, U.S.A.
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