Dependence of Electrical Characteristics on the Depth of the Recess Region in the Scaled Tantalum Nitride--Aluminum Oxide--Silicon Nitride--Silicon Oxide--Silicon Flash Memory Devices
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概要
- 論文の詳細を見る
Nanoscale tantalum nitride--aluminum oxide--silicon nitride--silicon oxide--silicon (TANOS) memory devices utilizing a recess region were investigated to improve device performance and reduce cell-to-cell interference. The dependence of electrical properties on the depth of the recess region in the TANOS flash memory devices was simulated by using Synopsys TCAD Sentaurus. The cell-to-cell interference characteristics of the TANOS flash memory devices dependent on the recess region were investigated. The drain current at an on-state in the TANOS flash memory devices increased with increasing depth of the recess region owing to the existence of the fringe field generated from the recess region. The coupling ratio of the TANOS flash memory increased with increasing depth of the recess region. The simulation results showed that the cell-to-cell interference in the TANOS flash memory devices decreased with increasing depth of the recess region.
- 2011-12-25
著者
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You Joo
Department Of Electronics And Computer Engineering Hanyang University
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Kim Tae
Department Of Anesthesia And Pain Medicine School Of Medicine Pusan National University
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Kim Kyoung
Department Of Biochemistry Seoul National University College Of Medicine
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Jang Sang
Department Of Dermatology Sanggye Paik Hospital Inje University College Of Medicine
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Kim Hyun
Department Of Agricultural Bio-resources National Academy Of Agricultural Science Rural Development
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Lee Keun
Research and Development Division, Hynix Semiconductor Inc., Icheon, Gyeonggi 467-701, Korea
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Jin Jun
Department of Electronics and Computer Engineering, Hanyang University, Seoul 133-791, Korea
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Kim Hyun
Department of Advanced Material Engineering, Daejeon University, Daejeon 300-716, Republic of Korea
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Kim Hyun
Department of Electronics and Computer Engineering, Hanyang University, Seoul 133-791, Korea
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Kim Kyoung
Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul 133-791, Korea
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Jang Sang
Department of Chemistry and Institute of Photonics and Information Technology, Chonbuk National University, Jeonju 561-756, Korea
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Jang Sang
Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul 133-791, Korea
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Kim Tae
Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul 133-791, Korea
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Kim Tae
Department of Advanced Materials Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Republic Korea
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You Joo
Department of Electronics and Computer Engineering, Hanyang University, Seoul 133-791, Korea
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