First-Principles Simulation on Orientation Dependence of Piezoresistance Properties in Silicon Nanowires

概要

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We simulated the piezoresistance coefficients in p- and n-type H-terminated $\langle 111\rangle$ silicon nanowire (SiNW) on the basis of first-principles calculations in order to discuss the dependence of the piezoresistive properties on crystallographic orientation, in comparison with the results of calculation for H-terminated SiNWs of other orientations reported in our previous paper. For the p-type $\langle 111\rangle$ SiNW, the hole conductivity depends only on the hole mobility of the highest valence-band subband. As a result, the longitudinal and transverse piezoresistance coefficients for p-type H-terminated $\langle 111\rangle$ SiNW are very small, in contrast to those in the case of p-type bare-walled $\langle 111\rangle$ SiNW with dangling bonds. In the n-type conduction, piezoresistance coefficients are also much smaller than the longitudinal one for the p-type $\langle 001\rangle$ SiNW model. We predict that $\langle 111\rangle$ SiNW will be not a suitable candidate for nanoscale piezoresistors.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2009-06-25