First-Principles Study on Piezoresistance Effect in Silicon Nanowires

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概要

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• We have simulated the piezoresistance coefficients in single-crystal silicon nanowires (SiNWs) on the basis of first-principles calculations of model structures. The carrier conductivity along the wire axis has been calculated using band carrier densities and their corresponding effective masses derived from the one-dimensional band diagram by a novel approach for a small amount of carrier occupation. In the $\langle 001\rangle$ SiNW model, the uniaxial tensile stress to the longitudinal direction causes a sharp drop in the band energy of the highest valence band, leading to the redistribution of holes to other valence bands with a huge hole effective mass. The sudden change in the hole occupation with the increase in effective mass will bring a drastic decrease in the hole conductivity. We have obtained a giant longitudinal piezoresistance coefficient of $147 \times 10^{-11}$ Pa-1 for the p-type $\langle 001\rangle$ SiNW. It is found that p-type $\langle 001\rangle$ SiNW will be one of the most suitable candidates for nanoscale piezoresistors due to its giant piezoresistivity.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-06-25

著者

• TORIYAMA Toshiyuki

  Department of Micro System Technology, Faculty of Science and Engineering, Ritsumeikan University

• Isono Yoshitada

  Department Of Engineering Ritsumeikan University

• Nakamura Koichi

  Office of Science and Engineering Research, Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan

• Isono Yoshitada

  Department of Micro System Technology, Faculty of Science and Engineering, Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan

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