Multilevel Storage in N-Doped Sb2Te3-Based Lateral Phase Change Memory with an Additional Top TiN Layer
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概要
- 論文の詳細を見る
In this study, we present the physical images of multilevel storage (MLS) in both vertical and lateral phase change memory (PCM) devices and investigate MLS in a lateral PCM device with an additional top heater (LTH-PCM). The active layers above two lateral electrodes consist of a 50-nm-thick TiN layer as a top heater and a 150-nm-thick N-doped Sb2Te3 layer. A number of distinct intermediate levels are obtained by current sweeping or pulse application. According to our analysis, MLS in our devices results mainly from the gradual crystallization between electrodes by Joule heating.
- 2009-04-25
著者
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Sone Hayato
Department Of Applied Physics The Science University Of Tokyo
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Ota Kazuhiro
Department Of Emergency And Critical Care Medicine School Of Medicine Fukuoka University
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Noguchi Tomoyuki
Department Of Clinical Radiology Graduate School Of Medical Sciences Kyushu University
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Ohno Hiroki
Department Of Biology Kyoto University Of Education
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Hosaka Sumio
Department Of Electronic Engineering Gunma University
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Hosaka Sumio
Department of Production Science and Technology, Gunma University, 1-5-1 Tenjin, Kiryu, Gunma 376-8515, Japan
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Yin You
Department of Production Science and Technology, Gunma University, 1-5-1 Tenjin, Kiryu, Gunma 376-8515, Japan
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Yin You
Department of Nano-Material Systems, Graduate School of Engineering, Gunma University, 1-5-1 Tenjin, Kiryu, Gunma 376-8515, Japan
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Sone Hayato
Department of Production Science and Technology, Gunma University, 1-5-1 Tenjin, Kiryu, Gunma 376-8515, Japan
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Noguchi Tomoyuki
Department of Production Science and Technology, Gunma University, 1-5-1 Tenjin, Kiryu, Gunma 376-8515, Japan
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Ota Kazuhiro
Department of Production Science and Technology, Gunma University, 1-5-1 Tenjin, Kiryu, Gunma 376-8515, Japan
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Ohno Hiroki
Department of Production Science and Technology, Gunma University, 1-5-1 Tenjin, Kiryu, Gunma 376-8515, Japan
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YIN You
Department of Nano-material Systems, Graduate School of Engineering, Gunma University
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