Critical-Dimension Measurement using Multi-Angle-Scanning Method in Atomic Force Microscope
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概要
- 論文の詳細を見る
We have developed a new critical dimension (CD) measurement technique using atomic force microscope (AFM) which can measure width-dimensions and examine sidewall-shapes of fine patterns on a wafer. The technique employs a flared-type tip in combination with digital probing and multi-angle scanning mechanism that allows the tip to trace the sidewalls on both sides of a feature (or trench) by making physical contacts with the sidewall surface. First, by using finite element method (FEM) we analyzed deformation of the tip and cantilever to compensate errors caused by the deformation. To verify our compensation method we measured quartz reference patterns either with perpendicular sidewalls or undercuts. In this paper we will describe the applications and usefulness of this multi-angle operation and show some measurement results of ArF resist patterns with 200 nm width and 400 nm depth that were obtained with a flared tip of 120 nm diameter.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-07-15
著者
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Murayama Ken
Mirai-association Of Super-advanced Electronics Technologies (aset)
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Gonda Satoshi
Mirai-national Institute Of Advanced Industrial Science And Technology (aist)
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KOYANAGI Hajime
MIRAI, Association of Super-Advanced Electronics Technologies
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TERASAWA Tsuneo
MIRAI, Association of Super-Advanced Electronics Technologies
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Hosaka Sumio
Department Of Electronic Engineering Gunma University
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Murayama Ken
MIRAI, Association of Super-Advanced Electronics Technologies, AIST West-7, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Gonda Satoshi
MIRAI, National Institute of Advanced Industrial Science and Technology, AIST Central-2 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Terasawa Tsuneo
MIRAI–Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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