Finite Element Analysis of Dependence of Programming Characteristics of Phase-Change Memory on Material Properties of Chalcogenides
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概要
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The programming characteristics of a phase-change memory (PCM) cell with a chalcogenide layer contacted by a resistive heater are investigated by finite element modelling. As analyzed in this study, the characteristics are markedly affected by the resistivity of the phase-change chalcogenide material. A higher reset current of 1.6 mA is required for the as-fabricated virgin PCM than that of 1.3 mA for the cycled PCM because of the resistivity difference of the chalcogenides in the two cases. More importantly, a chalcogenide layer with a much higher resistivity than the resistive heater is necessarily adopted for a higher energy efficiency to markedly reduce reset current to 0.6 mA or even lower while slightly increasing reset voltage.
- 2006-11-15
著者
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Sone Hayato
Department Of Applied Physics The Science University Of Tokyo
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Yin You
Department Of Production Science Technology Graduate School Of Engineering Gunma University
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Hosaka Sumio
Department Of Electronic Engineering Gunma University
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YIN You
Department of Nano-material Systems, Graduate School of Engineering, Gunma University
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