Electrical Properties of Phase Change and Channel Current Control in Ultrathin Phase-Change Channel Transistor Memory by Annealing (Special Issue: Solid State Devices & Materials)

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概要

著者

Yin You
Department Of Production Science Technology Graduate School Of Engineering Gunma University
Niida Daisuke
Department Of Nano-material Systems Graduate School Of Engineering Gunma University

関連論文

Extremely Small Proximity Effect in 30keV Electron Beam Drawing with Thin Calixarene Resist for 20 x 20nm^2 Pitch Dot Arrays
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A Novel Lateral Phase-Change Random Access Memory Characterized by Ultra Low RESET Current and Power Consumption
Memory Effect in Metal-Chalcogenide-Metal Structures for Ultrahigh-Density Nonvolatile Memories
Finite Element Analysis of Dependence of Programming Characteristics of Phase-Change Memory on Material Properties of Chalcogenides
Simulation of Proposed Confined-Chalcogenide Phase-Change Random Access Memory for Low Reset Current by Finite Element Modelling
Electrical Properties of Phase Change and Channel Current Control in Ultrathin Phase-Change Channel Transistor Memory by Annealing (Special Issue: Solid State Devices & Materials)
Annealing effect of phase change and current control in phase change channel transistor memory
Dependences of Electrical Properties of Thin GeSbTe and AgInSbTe Films on Annealing
Simulation of Proposed Confined-Chalcogenide Phase-Change Random Access Memory for Low Reset Current by Finite Element Modelling
A Novel Lateral Phase-Change Random Access Memory Characterized by Ultra Low Reset Current and Power Consumption
Finite Element Analysis of Dependence of Programming Characteristics of Phase-Change Memory on Material Properties of Chalcogenides
Electrical Properties of Phase Change and Channel Current Control in Ultrathin Phase-Change Channel Transistor Memory by Annealing

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